GSD4020T
描述
GroupSemiconductor(GS) has series Trench power MOSFET platforms for voltage up 20V to 200 volts, both with design service and manufacturing capability, including cell, termination design and simulation.
The GS 40V 20A N-Channel Power MOSFET is a Low voltage N channel Trench power MOSFET sample with advanced technology to have better characteristics, such as fast switching time, low Ciss and Crss, low on resistance and excellent avalanche characteristics, making it especially suitable for applications which require superior power density and outstanding efficiency.
特征
● Package=TO-252
● Package=TO-252
● VDS(max)=40
● ID(max)=20
● PD(max)=2
● VGS(max)=1
● RDS(on)10V=12mr
● RDS(on)4.5V=18mr